NXH010P120MNF1 SiC Module

onsemi NXH010P120MNF1 SiC Module contains a 10Mohm 1200V SiC MOSFET half-bridge and an NTC thermistor in an F1 module. The module has a recommended gate voltage of 18-20V. The NXH010P120MNF1 has an improved RDS(ON) at a higher voltage and low thermal resistance.

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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Series
Packaging

onsemi MOSFET Modules PIM F1 SIC HALFBRIDGE 1200V 10MOHM(NI-PLATED)
Datasheet
23In Stock
Min.: 1
Mult.: 1
SiC NXH010P120MNF1 Tray

onsemi MOSFET Modules PIM F1 SIC HALFBRIDGE 1200V 10MOHM(NI-PLATED + TIM)
Datasheet
1,148Factory Stock Available
More Info Available
Min.: 28
Mult.: 28
SiC Press Fit - 15 V, + 25 V - 40 C + 150 C NXH010P120MNF1 Tray

onsemi MOSFET Modules PIM F1 SIC HALFBRIDGE 1200V 10MOHM
Datasheet
56Factory Stock Available
More Info Available
Min.: 1
Mult.: 1
SiC Press Fit Module N-Channel 1.2 kV 114 A 14 mOhms - 15 V, + 25 V 1.8 V - 40 C + 150 C 413 W NXH010P120MNF1 Tray
onsemi MOSFET Modules PIM F1 SIC HALFBRIDGE 1200V 10MOHM
Datasheet
168Factory Stock Available
More Info Available
Min.: 1
Mult.: 1

SiC Press Fit - 15 V, + 25 V - 40 C + 150 C NXH010P120MNF1 Tray