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DMT3006LFDF-7

Name: Diodes Incorporated DMT3006LFDF-7
Brand: Diodes Incorporated
SKU: 621-DMT3006LFDF-7
Price: 0.78 USD
Availability: InStock

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Mouser No:

621-DMT3006LFDF-7

Mfr. No:

DMT3006LFDF-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET BVDSS: 31V-40V

Datasheet:

DMT3006LFDF-7 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMT3006LFDF-7

In Stock: 33,881

Stock:: 33,881 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.78	$0.78
	$0.467	$4.67
	$0.317	$31.70
	$0.242	$121.00
	$0.218	$218.00
Full Reel (Order in multiples of 3000)
	$0.173	$519.00
	$0.165	$990.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-2020-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	14.1 A
Rds On - Drain-Source Resistance:	7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	16.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.1 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	6.750 mg

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Datasheet

DMT3006LFDF-7 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

DMT3006LFDF-7 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMT3006LFDF-7 MOSFET is a 30V N-Channel Enhancement-Mode MOSFET designed with a 0.6mm profile and 4mm² footprint. Qualified to AEC-Q101 Standards for High Reliability, the DMT3006LFDF-7 MOSFET minimizes on-state resistance while maintaining excellent switching performance. The MOSFET offers a 5.8mΩ to 15mΩ on-state resistance, 1V to 3V gate threshold voltage, 12.5A to 14.1A continuous drain current, and 2.1W power dissipation. Switching performance includes a 4.6ns turn-off fall time, 5.5ns turn-on rise time, a typical 13.5ns turn-off delay time, a typical 3.5ns turn-on delay time, and 19.3 reverse recovery time. The 30V DMT3006LFDF-7 N-Channel Enhancement-Mode MOSFET design makes the device ideal for high-efficiency power-management applications.

DMTx MOSFETs

Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.

Gate Drivers

Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.