High-Speed Indium Phosphide (InP) Photodiodes

Coherent High-Speed Indium Phosphide (InP) Photodiodes are designed for use in next-generation 800G and 1.6T transceivers with 200Gb/s PAM4 optical lanes. These photodiodes offer both singlet and 1x4 array configurations with integrated lenses. These RoHS-compliant devices provide efficient optical coupling and compatibility with all major four-channel and eight-channel transimpedance amplifiers (TIA). The flip-chip pad configurations are engineered to meet the demanding requirements of longwave fiber-optic communication systems, especially data center applications. Coherent High-Speed Indium Phosphide (InP) Photodiodes feature a wide optical response from 900nm to 1650nm, high responsivity at 1310nm, low capacitance of 50fF, and low dark current.