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NVH4L020N090SC1

Name: onsemi NVH4L020N090SC1
Brand: onsemi
SKU: 863-NVH4L020N090SC1
Price: 37.91 USD
Availability: InStock

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Mouser No:

863-NVH4L020N090SC1

Mfr. No:

NVH4L020N090SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOSFET 900V TO247-4L 20MOHM

Datasheet:

NVH4L020N090SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVH4L020N090SC1

In Stock: 450

Stock:: 450 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 450 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$37.91	$37.91
	$28.09	$280.90
	$27.63	$3,315.60

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Package/Case:	TO-247-4
Tradename:	EliteSiC
Brand:	onsemi
Country of Assembly:	CN
Country of Diffusion:	KR
Country of Origin:	CN
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	NVH4L020N090SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC

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Datasheet

NVH4L020N090SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290095
ECCN:: EAR99

900V EliteSiC (Silicon Carbide) MOSFETs

onsemi 900V EliteSiC (Silicon Carbide) MOSFETs use a technology that provides superior switching performance and higher reliability than silicon. Also, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).