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SIZF906BDT-T1-GE3

Name: Vishay SIZF906BDT-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIZF906BDT-T1-GE3
Price: 2.76 USD
Availability: InStock

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Mouser No:

78-SIZF906BDT-T1-GE3

Mfr. No:

SIZF906BDT-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAIR6X5 2NCH 30V 36A

Datasheet:

SIZF906BDT-T1-GE3 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SIZF906BDT-T1-GE3

In Stock: 10,744

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.76	$2.76
	$1.79	$17.90
	$1.23	$123.00
	$0.999	$499.50
	$0.923	$923.00
Full Reel (Order in multiples of 3000)
	$0.815	$2,445.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAIR-6x5F-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	105 A, 257 A
Rds On - Drain-Source Resistance:	680 uOhms, 2.1 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	25 nC, 81 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	38 W, 83 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Dual
Fall Time:	5 ns, 10 ns
Forward Transconductance - Min:	93 S, 170 S
Product Type:	MOSFETs
Rise Time:	5 ns, 30 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Gen IV Power MOSFET
Typical Turn-Off Delay Time:	22 ns, 40 ns
Typical Turn-On Delay Time:	12 ns, 20 ns
Unit Weight:	337.318 mg

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Datasheet

SIZF906BDT-T1-GE3 Datasheet

Technical Resources

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CNHTS:: 8504409100
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiZF906BDT Dual N-Channel (D-S) MOSFET

Vishay / Siliconix SiZF906BDT Dual N-Channel (D-S) MOSFET is a SkyFET^® low side MOSFET with integrated schottky. The TrenchFET^® Gen IV power MOSFET is offered in a PowerPAIR 6x5F package and is 100% Rg and UIS tested. The Vishay / Siliconix SiZF906BDT Dual MOSFET is ideal for CPU core power, computer/server peripherals, POL, synchronous buck converter, and telecom DC/DC applications.