STGWA30M65DF2AG

STMicroelectronics
511-STGWA30M65DF2AG
STGWA30M65DF2AG

Mfr.:

Description:
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 546

Stock:
546 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$4.44 $4.44
$3.05 $30.50
$2.27 $272.40
$1.90 $969.00
$1.65 $1,683.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
2.02 V
20 V
87 A
441 W
- 55 C
+ 175 C
AEC-Q101
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 57 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBTs
Factory Pack Quantity: 30
Subcategory: Transistors
Unit Weight: 6.100 g
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Attributes selected: 0

Datasheet

PCN

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

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