Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

Results: 30
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Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Renesas Electronics GaN FETs 650V, 300mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 3,000
Mult.: 3,000
Reel: 3,000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 8 A 312 mOhms 20 V 2 V 12.7 nC - 55 C + 150 C 31.5 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 85mohm GaN FET in TOLL Non-Stocked Lead-Time 14 Weeks
Min.: 2,000
Mult.: 2,000
Reel: 2,000

650 V SuperGaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 3,000
Mult.: 3,000
Reel: 3,000

SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 16 A 180 mOhms 20 V 4.8 V 8 nC - 55 C + 150 C 52 W Enhancement SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 3,000
Mult.: 3,000
Reel: 3,000

SMD/SMT PQFN-8 N-Channel 1 Channel 700 V 312 mOhms 12 V 2.5 V 5.4 nC - 55 C + 150 C 31.2 W SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in TO220
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 1,000
Mult.: 1,000

SMD/SMT PQFN-8 N-Channel 1 Channel 700 V 312 mOhms 12 V 2.5 V 5.4 nC - 55 C + 150 C 31.2 W SuperGaN