Automotive U-MOSVIII-H Power MOSFETs

Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. These devices feature low on-resistance with proprietary technology using a Cu connector. The Toshiba U-MOSVIII-H Power MOSFETs have a narrowed gate threshold voltage range of 2.5V to 3.5V, which reduces switching time tolerance.

Results: 28
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 Mfr.
Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Packaging
Toshiba MOSFETs N-ch MOSFET, 30 V, 3.0 A, 0.095 ohm at 10V, DFN2020B(WF)
Datasheet
3,000Expected 16/02/2026
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT DFN-6 N-Channel 1 Channel 30 V 3 A 95 mOhms 20 V 2.5 V 1.7 nC + 150 C 3.3 W Enhancement Reel, Cut Tape
Toshiba MOSFETs N-ch MOSFET, 100 V, 3.5 A, 0.069 ohm at 10V, DFN2020B(WF)
Datasheet
3,000Expected 16/02/2026
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT DFN-6 N-Channel 1 Channel 100 V 3.5 A 69 mOhms 20 V 2.5 V 3.2 nC + 175 C 4.3 W Enhancement Reel, Cut Tape
Toshiba MOSFETs N-ch MOSFET, 40 V, 8.0 A, 0.0118 ohm at 10V, DFN2020B(WF)
Datasheet
3,000Expected 16/02/2026
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT DFN-6 N-Channel 1 Channel 40 V 8 A 17.8 mOhms 20 V 2.5 V 6.5 nC + 175 C 4.3 W Enhancement Reel, Cut Tape