CGHV35400F1 MACOM | Mouser Israel

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not sell this product in your region.
RoHS:
Mounting Style:	Screw Mount
Package/Case:	440225
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	125 V
Id - Continuous Drain Current:	24 A
Vgs th - Gate-Source Threshold Voltage:	3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Brand:	MACOM
Gain:	11 dB
Maximum Operating Frequency:	3.5 GHz
Minimum Operating Frequency:	2.9 GHz
Output Power:	400 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V

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Datasheet

CGHV35400F1 Datasheet (PDF)

PCN

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.a.3

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

CGHV35400F 400W 50Ω I/O Matched GaN HEMT

Wolfspeed CGHV35400F 400W 2.9GHz to 3.5GHz, 50Ω I/O Matched GaN HEMT for S-Band radar amplifier applications offers high efficiency, high gain, and vast bandwidth capabilities. The CGHV35400F transistor is matched to 50 ohms on the input and 50 ohms on the output.