Power MOSFETs

YAGEO XSemi Power MOSFETs use advanced processing techniques for low on-resistance, efficiency, and cost-effectiveness. YAGEO XSemi Power MOSFETs are available in different packages to fit application needs. Packages available for the device are widely used for commercial and industrial applications.

Results: 79
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
YAGEO XSemi MOSFETs N-CH 60V 2.5A SOT-23S 2,868In Stock
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT SOT-23S-3 N-Channel 1 Channel 60 V 2.5 A 90 mOhms - 20 V, 20 V 3 V 5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs P-CH -60V -1. 6A SOT-23S 2,970In Stock
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT SOT-23S-3 P-Channel 1 Channel 60 V 1.6 A 250 mOhms - 20 V, 20 V 3 V 5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs N-CH 20V 0.2A SOT-723
10,000Expected 18/03/2026
Min.: 1
Mult.: 1
Reel: 10,000

Si SMD/SMT SOT-723-3 N-Channel 1 Channel 20 V 200 mA 1.2 Ohms - 8 V, 8 V 1 V 700 pC - 55 C + 150 C 150 mW Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs Complementary N ch + P ch 30V/-30
6,000Expected 03/03/2026
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT PMPAK-8 N-Channel, P-Channel 2 Channel 30 V 11 A, 7.3 A 18 mOhms, 45 mOhms - 20 V, 20 V 2.4 V, 2 V 5.2 nC, 6 nC - 55 C + 150 C 3.57 W Enhancement Reel, Cut Tape, MouseReel