2N7002 N-Channel E-Mode Field Effect Transistors

Diodes Incorporated 2N7002 N-Channel Enhancement-Mode Field Effect Transistors (FETs) are designed for low-voltage switching applications. These 2N7002 devices feature a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) ranging from 105mA to 210mA, and a low on-resistance [R_DS(on)] ranging from 7.5Ω to 13.5Ω. The FETs offer fast switching performance with low gate charge, suitable for signal processing, load switching, and level-shifting applications. The Diodes Inc. transistors are housed in a compact SOT-23 package, ensuring space efficiency for high-density circuit designs. Additionally, 2N7002  FETs are lead-free, RoHS-compliant, and designed for automated surface-mount assembly.