OptiMOS™ Linear FETs

Infineon Technologies OptiMOS™ Linear FET is a solution to avoid the trade-off between on-state resistance RDS(on) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. The devices feature the state-of-the-art RDS(on) of a trench MOSFET and a classic planar MOSFET's wide, safe operating area. The OptiMOS Linear FET prevents damage at the load by limiting high in-rush currents.

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Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs IFX FET >150 - 400V
Datasheet
853In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 88 A 9.8 mOhms - 20 V, 20 V 2.2 V 76 nC - 55 C + 150 C 250 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs DIFFERENTIATED MOSFETS
Datasheet
5,565In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 120 A 1.7 mOhms - 20 V, 20 V 2.2 V 210 nC - 55 C + 175 C 375 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
3,493In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 120 A 3.9 mOhms - 20 V, 20 V 3.3 V 84 nC - 55 C + 150 C 313 W Enhancement OptiMOS Reel, Cut Tape, MouseReel