SQS660CENW-T1_GE3

Vishay / Siliconix
78-SQS660CENW-T1_GE3
SQS660CENW-T1_GE3

Mfr.:

Description:
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET

Datasheet:
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In Stock: 60,078

Stock:
60,078 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$1.33 $1.33
$0.836 $8.36
$0.554 $55.40
$0.433 $216.50
$0.393 $393.00
Full Reel (Order in multiples of 3000)
$0.343 $1,029.00
$0.326 $1,956.00
$0.319 $2,871.00
$0.311 $7,464.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PowerPAK-1212-8W
N-Channel
1 Channel
60 V
18 A
11.2 mOhms
- 20 V, 20 V
2.5 V
17.4 nC
- 55 C
+ 175 C
62.5 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 5 ns
Forward Transconductance - Min: 26 S
Product Type: MOSFETs
Rise Time: 4 ns
Series: SQS
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: TrenchFET Power MOSFET
Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 12 ns
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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

SQS660CENW Automotive N-Ch 60V MOSFET

Vishay / Siliconix SQS660CENW Automotive N-Ch 60V MOSFET is an AEC-Q101 qualified TrenchFET® power MOSFET. The SQS660CENW is specified at 18A ID and 60V VDS. The single configuration device is offered in a PowerPAK® 1212-8W package with an operating junction and storage temperature range of -55°C to +175°C.

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