GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

Results: 33
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature
MACOM GaN FETs GaN HEMT 1.2-1.4GHz, 500 Watt Non-Stocked Lead-Time 26 Weeks
Min.: 10
Mult.: 10

Screw Mount 440117 N-Channel 150 V 36 A - 3 V - 40 C + 130 C
MACOM GaN FETs GaN HEMT Die DC-18GHz, 6 Watt Non-Stocked Lead-Time 26 Weeks
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 100 V 800 mA 2.3 Ohms - 3 V
MACOM GaN FETs GaN HEMT DC-2.7GHz, 60 Watt Non-Stocked Lead-Time 26 Weeks
Min.: 250
Mult.: 250
Reel: 250

SMD/SMT QSOP-20 N-Channel 150 V 6.3 A - 3 V - 40 C + 90 C
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 40 Watt Lead-Time 26 Weeks
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 2 Channel 50 V 3.2 A
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 170 Watt
Non-Stocked Lead-Time 26 Weeks
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 8 Channel 50 V 12.6 A
MACOM GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Non-Stocked
Min.: 50
Mult.: 1

Screw Mount 440210 N-Channel 100 V 6 A - 3 V - 40 C + 150 C
MACOM GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Screw Mount 440210 N-Channel 100 V 6 A 2.3 V - 40 C + 150 C
MACOM GaN FETs GaN HEMT 7.9-9.6GHz, 100 Watt
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Screw Mount 440210 N-Channel 100 V 12 A - 3 V - 40 C + 150 C