SGT070R70HTO

STMicroelectronics
511-SGT070R70HTO
SGT070R70HTO

Mfr.:

Description:
GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
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New Product:
New from this manufacturer.
Datasheet:
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In Stock: 348

Stock:
348 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1800)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$9.96 $9.96
$6.83 $68.30
$5.13 $513.00
$4.19 $4,190.00
Full Reel (Order in multiples of 1800)
$4.18 $7,524.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
TO-LL-11
700 V
26 A
70 mOhms
- 6 V, + 7 V
2.5 V
8.5 nC
- 55 C
+ 150 C
231 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 9 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: FET
Product Type: GaN FETs
Rise Time: 9 ns
Series: SGT
Factory Pack Quantity: 1800
Subcategory: Transistors
Technology: GaN
Type: PowerGaN Transistor
Typical Turn-Off Delay Time: 7 ns
Typical Turn-On Delay Time: 10 ns
Unit Weight: 697 mg
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Attributes selected: 0

Datasheet

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Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SGT070R70HTO E-Mode PowerGaN Transistor

STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor is a high-performance enhancement-mode transistor designed for demanding power conversion applications. Built on Gallium Nitride (GaN) technology, the STMicro SGT070R70HTO offers superior switching performance with a low on-resistance of 70mΩ and minimal gate charge, enabling high efficiency and reduced losses in high-frequency operations. With a 700V drain-source voltage rating, the transistor is ideal for applications such as power supplies, motor drives, and renewable energy systems. The device features robust thermal performance and is housed in a compact TO-LL package, making it suitable for designs where space and heat management are critical. Fast switching capability and low input capacitance contribute to improved system efficiency and power density, positioning the SGT070R70HTO as a strong choice for next-generation power electronics.

PowerGaN E-Mode G-HEMT™ Transistors

STMicroelectronics PowerGaN E-Mode G-HEMT™ Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.

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