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SCT4045DWAHRTL

Name: ROHM Semiconductor SCT4045DWAHRTL
Brand: ROHM Semiconductor
SKU: 755-SCT4045DWAHRTL
Price: 12.17 USD
Availability: InStock

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Mouser No:

755-SCT4045DWAHRTL

Mfr. No:

SCT4045DWAHRTL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TO263 750V 31A N-CH SIC

Datasheet:

SCT4045DWAHRTL Datasheet

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Learn more about ROHM Semiconductor SCT4045DWAHRTL

In Stock: 1,996

Stock:: 1,996 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$12.17	$12.17
	$8.44	$84.40
	$6.67	$667.00
Full Reel (Order in multiples of 1000)
	$6.31	$6,310.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	59 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	63 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	93 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	9.3 S
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	16 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	Power MOSFET
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	5.1 ns

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Datasheet

SCT4045DWAHRTL Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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Compliance Codes

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4045DWAHR AEC-Q101 N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4045DWAHR AEC-Q101 N-Channel Silicon Carbide (SiC) Power MOSFET is an automotive-grade device engineered for high-efficiency and high-reliability applications in harsh environments. With a drain-source voltage rating of 750V and a continuous drain current of 31A (at +25°C per chip), this dual MOSFET device offers a typical on-resistance of just 45mΩ per channel, enabling reduced conduction losses and improved thermal performance. Packaged in a compact TO-263-7LA configuration, the ROHM SCT4045DWAHR supports high-density designs and efficient thermal management.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.