Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Vds - Drain-Source Breakdown Voltage Minimum Operating Temperature Maximum Operating Temperature

NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V 90In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V 158In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C

NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V 45In Stock
Min.: 1
Mult.: 1
: 250



NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V 25In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V 48In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V 22In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C