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NTBG028N170M1

Name: onsemi NTBG028N170M1
Brand: onsemi
SKU: 863-NTBG028N170M1
Price: 40.16 USD
Availability: OutOfStock

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See Product Specifications

Mouser No:

863-NTBG028N170M1

Mfr. No:

NTBG028N170M1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC 1700V MOS 28MO IN TO263-7L

Datasheet:

NTBG028N170M1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTBG028N170M1

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 539

Expected 06/11/2026

5,600

2,400

Expected 18/01/2027

800

Expected 10/05/2027

2,400

Expected 15/07/2027
Factory Lead Time:: 30

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 800

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$40.16	$40.16
	$32.61	$326.10
	$30.66	$3,066.00
	$28.99	$14,495.00
Full Reel (Order in multiples of 800)
	$28.99	$23,192.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	71 A
Rds On - Drain-Source Resistance:	40 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	222 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	428 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	27 S
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	18 ns
Series:	NTBG028N170M1
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	121 ns
Typical Turn-On Delay Time:	47 ns

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Datasheet

NTBG028N170M1 Datasheet

Material Composition Disclosure

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

NTBG028N170M1 1700V Silicon Carbide (SiC) MOSFET

onsemi NTBG028N170M1 1700V Silicon Carbide (SiC) MOSFET are optimized for fast-switching applications. The onsemi MOSFETs feature Planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family provides optimum performance when driven with a 20V gate drive, but also works well with an 18V gate drive.