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IXSH80N120L2KHV

Name: IXYS IXSH80N120L2KHV
Brand: IXYS
SKU: 747-IXSH80N120L2KHV
Price: 12.45 USD
Availability: InStock

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Mouser No:

747-IXSH80N120L2KHV

Mfr. No:

IXSH80N120L2KHV

Mfr.:

IXYS

Description:

SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSH80N120L2KHV Datasheet (PDF)

ECAD Model:

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Learn more about IXYS IXSH80N120L2KHV

In Stock: 392

Stock:: 392 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$12.45	$12.45
	$10.14	$101.40
	$8.45	$1,014.00
	$7.52	$3,835.20
	$7.03	$7,170.60

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	79 A
Rds On - Drain-Source Resistance:	39 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	395 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	14 ns
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	24.4 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	28.8 ns
Typical Turn-On Delay Time:	12.8 ns

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Datasheet

IXSH80N120L2KHV Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IXSH80N120L2KHV SiC MOSFET

IXYS IXSH80N120L2KHV SiC MOSFET is an industrial-grade, single-switch SiC MOSFET exhibiting good power cycling characteristics and very fast, low-loss switching behavior. This MOSFET is designed with an ultra-fast intrinsic body diode and offers a maximum virtual junction temperature of 175°C. The IXSH80N120L2KHV MOSFET features high blocking voltage with low on-resistance and high-speed switching with low capacitance. The IXSH80N120L2KHV MOSFET is used in switch mode power supplies, solar inverters, UPS, motor drives, DC/DC converters, EV charging infrastructure, and induction heating applications.