NXH400N100L4Q2F2SG

onsemi
863-H400N100L4Q2F2SG
NXH400N100L4Q2F2SG

Mfr.:

Description:
Discrete Semiconductor Modules I-Type NPC 1000 V, 200 A IGBT, 1000 V, 75 A Diode Solder Pin

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 33

Stock:
33 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$189.02 $189.02
$183.13 $2,197.56

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Discrete Semiconductor Modules
IGBT-Diode Modules
Si
SMD/SMT
Q2PACK
- 40 C
+ 175 C
NXH400N100L4Q2F2
Tray
Brand: onsemi
Configuration: Module
Pd - Power Dissipation: 980 W
Product Type: Discrete Semiconductor Modules
Factory Pack Quantity: 12
Subcategory: Discrete and Power Modules
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NXH400N100L4Q2F2 IGBT Modules

onsemi NXH400N100L4Q2F2 IGBT Modules contain an I-type neutral point clamped three-level inverter. The onsemi NXH400N100L4Q2F2 Modules leverage integrated field stop trench IGBTs and FRDs to minimize conduction and switching losses, ensuring exceptional efficiency and reliability. The modules feature a neutral point-clamped three-level inverter design and employ an extremely efficient trench with field stop technology for optimized performance. The devices' low inductive layout and package height further enhance efficiency and reliability while integrating a thermistor for temperature monitoring.