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AFGBG70T65SQDC

Name: onsemi AFGBG70T65SQDC
Brand: onsemi
SKU: 863-AFGBG70T65SQDC
Price: 8.05 USD
Availability: InStock

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Mouser No:

863-AFGBG70T65SQDC

Mfr. No:

AFGBG70T65SQDC

Mfr.:

onsemi

Description:

IGBTs FS4 70A HIGH SPEED CO-PACK WITH SIC DIODE 20A GEN1.5

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AFGBG70T65SQDC Datasheet (PDF)

ECAD Model:

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More Information

Learn more about onsemi AFGBG70T65SQDC

In Stock: 560

Stock:: 560 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$8.05	$8.05
	$6.23	$62.30
	$5.28	$528.00
	$5.04	$2,520.00
Full Reel (Order in multiples of 800)
	$4.96	$3,968.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
Technology:	SiC
Package/Case:	D2PAK-7
Mounting Style:	SMD/SMT
Configuration:	Single
Collector-Emitter Saturation Voltage:	1.54 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	75 A
Pd - Power Dissipation:	617 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	AFGBG70T65SQDC
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Continuous Collector Current Ic Max:	70 A
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBTs
Factory Pack Quantity:	800
Subcategory:	Transistors

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Datasheet

AFGBG70T65SQDC Datasheet (PDF)

USHTS:: 8541210095
TARIC:: 8541290000
ECCN:: EAR99

AFGBG70T65SQDC N-Channel Field Stop IV IGBT

onsemi AFGBG70T65SQDC N-Channel Field Stop IV High Speed IGBT uses the novel field stop 4th generation IGBT technology and Generation 1.5 SiC Schottky Diode technology. This 650V collector-to-emitter (V_CES) rated IGBT comes in a D²PAK7 package. It is rated at 1.54V collector-to-emitter saturation voltage (V_CE(SAT)) and a collector current (I_C) of 70A. The onsemi AFGBG70T65SQDC offers optimal performance with both low conduction and switching losses, enabling high efficiency in various applications.