NTH4L022N120M3S Silicon Carbide (SiC) MOSFETs

onsemi NTH4L022N120M3S Silicon Carbide (SiC) MOSFETs are a family of 1200V M3S planar SiC MOSFETs. The onsemi NTH4L022N120M3S is optimised for fast-switching applications. Planar technology works reliably with negative gate voltage drives and turns off spikes on the gate. These MOSFETs feature optimum performance when driven with an 18V gate drive but also work well with a 15V gate drive.

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Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename

onsemi SiC MOSFETs DISCRETE SIC M3S 1200V 13MOHM
Datasheet
246In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 151 A 20 mOhms - 10 V, + 22 V 4.4 V 254 nC - 55 C + 175 C 682 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
Datasheet
1,634In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 68 A 30 mOhms - 10 V, + 22 V 4.4 V 151 nC - 55 C + 175 C 352 W Enhancement EliteSiC