It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SICW028N120A4-BP

Name: Micro Commercial Components (MCC) SICW028N120A4-BP
Brand: Micro Commercial Components (MCC)
SKU: 833-SICW028N120A4-BP
Price: 26.03 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

833-SICW028N120A4-BP

Mfr. No:

SICW028N120A4-BP

Mfr.:

Micro Commercial Components (MCC)

Description:

SiC MOSFETs

Datasheet:

SICW028N120A4-BP Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Micro Commercial Components (MCC) SICW028N120A4-BP

In Stock: 343

Stock:: 343 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$26.03	$26.03
	$20.84	$208.40
	$18.02	$1,802.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Micro Commercial Components (MCC)
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	30 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	168 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Brand:	Micro Commercial Components (MCC)
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	11 ns
Packaging:	Bulk
Product Type:	SiC MOSFETS
Rise Time:	13 ns
Series:	SICW028N120A4
Factory Pack Quantity:	1800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	42.5 ns
Typical Turn-On Delay Time:	14 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

                        
The factory is currently not accepting orders for this product.

Filter Document:

Datasheet

SICW028N120A4-BP Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

DC Fast Charging Solutions

MCC DC Fast Charging Solutions support the next generation of EV infrastructures with high-performance components designed for speed, safety, and system efficiency. As global EV adoption accelerates, fast chargers are crucial for meeting driver expectations, cutting charge times dramatically, and making electric mobility more practical and scalable.

SICW028N120A4 1200V SiC MOSFET

Micro Commercial Components (MCC) SICW028N120A4 1200V SiC MOSFET is designed with a low on-resistance of just 28mΩ at a gate-source voltage of 18V. This N-channel MOSFET works well with the popular D2PAK 4-pin footprint and includes a Kelvin source pin to reduce switching losses and boost energy efficiency significantly. This SICW028N120A4 MOSFET features a high avalanche ruggedness and has the ability to operate at high junction temperatures of 175°C. This MOSFET ensures superior thermal performance and efficient heat management, eliminating the need for additional cooling components while increasing product reliability and lifespan. The SICW028N120A4 MOSFET is a robust and reliable solution for a host of industrial and commercial applications dealing in harsh environments.