It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

TP65H050G4YS

Name: Renesas Electronics TP65H050G4YS
Brand: Renesas Electronics
SKU: 227-TP65H050G4YS
Price: 9.77 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

227-TP65H050G4YS

Mfr. No:

TP65H050G4YS

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 50mohm GaN FET in TO247-4L

Datasheet:

TP65H050G4YS Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Renesas Electronics TP65H050G4YS

In Stock: 611

Stock:: 611 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$9.77	$9.77
	$6.72	$67.20
	$4.47	$447.00
	$4.46	$5,352.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	16 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	132 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Configuration:	Cascode
Fall Time:	8 ns
Packaging:	Tube
Product Type:	GaN FETs
Rise Time:	5 ns
Series:	Gen IV SuperGaN
Factory Pack Quantity:	1200
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	40 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TP65H050G4YS Datasheet

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TP65H050G4YS 650V SuperGaN® FET

Renesas Electronics TP65H050G4YS 650V SuperGaN^® FET is a 50mΩ Gallium Nitride (GaN) normally-off device available in 4 Lead TO-247 package. This Gen IV SuperGaN FET uses Gen IV platform, which supports advanced epi and patented design technologies to simplify manufacturability. The TP65H050G4YS 650V FET combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET for superior reliability and performance. This SuperGaN FET improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Typical applications include datacom broad industrial, PV inverter, and servo motor.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.