SIA906EDJ-T1-GE3

Vishay Semiconductors
781-SIA906EDJ-GE3
SIA906EDJ-T1-GE3

Mfr.:

Description:
MOSFETs 20V Vds 12V Vgs PowerPAK SC-70

ECAD Model:
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In Stock: 35,587

Stock:
35,587 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$0.91 $0.91
$0.559 $5.59
$0.382 $38.20
$0.30 $150.00
$0.267 $267.00
Full Reel (Order in multiples of 3000)
$0.227 $681.00
$0.202 $1,212.00
$0.19 $1,710.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SC-70-6
N-Channel
2 Channel
20 V
4.5 A
46 mOhms
- 8 V, 8 V
600 mV
950 pC
- 55 C
+ 150 C
7.8 W
Enhancement
TrenchFET, PowerPAK
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Dual
Fall Time: 12 ns
Forward Transconductance - Min: 14 S
Product Type: MOSFETs
Rise Time: 18 ns
Series: SIA
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 12 ns
Typical Turn-On Delay Time: 10 ns
Part # Aliases: SIA906EDJ-GE3
Unit Weight: 28 mg
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Attributes selected: 0

CNHTS:
8541290000
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 

SiA906EDJ Dual N-Channel MOSFET

Vishay Siliconix SiA906EDJ Dual N-Channel MOSFET is designed to save space and increase power efficiency in portable electronics. It features the industry's lowest on-resistance for 20V (12V VGS) devices at 4.5V gate drives in the 2x2mm footprint area.