IGBT Gate Drives with Murata DC-DC Converters

Infineon IGBTs are commonly used in high-power inverter and converter circuits that require significant isolated gate drive power to switch optimally. Murata small isolated DC/DC converters can provide that power. The same considerations apply in principle to gate drives for silicon, silicon carbide, and gallium nitride MOSFETs.

Results: 35
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package/Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging

Infineon Technologies IGBTs 600V 20A 170W 985In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 40 A 170 W - 40 C + 175 C Trenchstop IGBT3 Tube

Infineon Technologies IGBTs 600V 30A 187W 671In Stock
Min.: 1
Mult.: 1
Max.: 60

Si TO-247-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 60 A 187 W - 40 C + 175 C Trenchstop IGBT3 Tube

Infineon Technologies IGBTs IGBT PRODUCTS 3In Stock
480Expected 23/07/2026
Min.: 1
Mult.: 1
Max.: 10

Si TO-247-3 Through Hole Single 1.2 kV 2.05 V - 20 V, 20 V 80 A 483 W - 40 C + 175 C Trenchstop IGBT4 Tube

Infineon Technologies IGBTs IGBT PRODUCTS 60In Stock
8,640On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 74 A 250 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs IGBT PRODUCTS
4,472On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.05 V - 20 V, 20 V 80 A 483 W - 40 C + 175 C HighSpeed 3 Tube

Infineon Technologies IGBTs 600V 50A 333W
752Expected 06/08/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.85 V - 20 V, 20 V 100 A 333 W - 40 C + 175 C HighSpeed 3 Tube

Infineon Technologies IGBTs IGBT PRODUCTS
5,280Expected 27/08/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 305 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs 600V HI SPEED SW IGBT
240Expected 12/11/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 40 A 170 W - 40 C + 175 C HighSpeed 3 Tube

Infineon Technologies IGBTs IGBT PRODUCTS
346Expected 25/02/2027
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.05 V - 20 V, 20 V 30 A 217 W - 40 C + 175 C Trenchstop IGBT4 Tube
Infineon Technologies IGBTs IGBT PRODUCTS Non-Stocked Lead-Time 19 Weeks
Min.: 1
Mult.: 1

Si TO-220FP-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 10.8 A 31.2 W - 40 C + 175 C TRENCHSTOP 5 H5 Tube