QPA2935 2W S-Band GaN Driver Amplifier

Qorvo QPA2935 2W S-Band GaN Driver Amplifier operates from 2.7GHz to 3.5GHz and delivers 33dBm of saturated output power and 18dB of large-signal gain while achieving greater than 52% power-added efficiency. The QPA2935 is fabricated on the QGaN25 0.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) process and is matched to 50Ω with integrated DC blocking caps on both I/O ports.

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Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Operating Frequency Operating Supply Voltage Operating Supply Current Gain Type Mounting Style Technology Minimum Operating Temperature Maximum Operating Temperature Series Packaging
Qorvo RF Amplifier 2.9-3.5 GHz, 2W S-band MMIC, OVM 72In Stock
Min.: 1
Mult.: 1

2.7 GHz to 3.5 GHz 25 V 29 mA 28.4 dB Driver Amplifiers SMD/SMT GaN SiC - 40 C + 85 C QPA2935 Bag
Qorvo RF Amplifier 2.9-3.5 GHz, 2W S-band MMIC, OVM Non-Stocked Lead-Time 16 Weeks
Min.: 250
Mult.: 250
Reel: 250

2.7 GHz to 3.5 GHz 25 V 29 mA 28.4 dB Driver Amplifiers SMD/SMT GaN SiC - 40 C + 85 C QPA2935 Reel