It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

FGH50T65UPD

Name: onsemi FGH50T65UPD
Brand: onsemi
SKU: 512-FGH50T65UPD
Price: 7.61 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

512-FGH50T65UPD

Mfr. No:

FGH50T65UPD

Mfr.:

onsemi

Description:

IGBTs 650 V 100 A 240 W

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

FGH50T65UPD Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi FGH50T65UPD

In Stock: 81

Stock:: 81 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.61	$7.61
	$4.41	$44.10
	$3.70	$444.00
	$3.68	$1,876.80

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	340 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGH50T65UPD
Packaging:	Tube
Brand:	onsemi
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	6.390 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FGH50T65UPD Datasheet

PCN

CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

FGAFx0N60 Field Stop IGBTs

onsemi FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. onsemi FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.

FGHx0T65 650V Field Stop IGBTs

onsemi FGHx0T65 650V Field Stop IGBTs use innovative field stop trench IGBT technology. These IGBTs offer optimum performance. The FGHx0T65 IGBTs feature positive temperature coefficient for easy parallel operating, high current capability, high input impedance, and tightened parameter distribution. Typical applications include solar inverters, UPS, welders, and digital power generators that require low conduction and switching losses.