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NVBG020N120SC1

Name: onsemi NVBG020N120SC1
Brand: onsemi
SKU: 863-NVBG020N120SC1
Price: 48.83 USD
Availability: InStock

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Mouser No:

863-NVBG020N120SC1

Mfr. No:

NVBG020N120SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS D2PAK-7L 20MOHM 1

Datasheet:

NVBG020N120SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVBG020N120SC1

In Stock: 234

Stock:: 234 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 234 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$48.83	$48.83
	$42.37	$423.70
	$39.44	$3,944.00
	$39.43	$19,715.00
Full Reel (Order in multiples of 800)
	$34.63	$27,704.00
24,800	Quote

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	98 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	220 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	468 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	34 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	20 ns
Series:	NVBG020N120SC1
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	42 ns
Typical Turn-On Delay Time:	22 ns
Unit Weight:	4.675 g

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Datasheet

NVBG020N120SC1 Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

NVBG020N120SC1 N-Channel Silicon Carbide MOSFETs

onsemi NVBG020N120SC1 N-Ch Silicon Carbide MOSFETs use a technology that provides superior switching performance and higher reliability. The NVBG020N120SC1 MOSFETs implement higher efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The onsemi device's low ON resistance and compact chip size ensure low capacitance and gate charge. The NVBG020N120SC1 N-Ch Silicon Carbide MOSFETs are qualified for automotive use according to AEC-Q101, making them ideal for automotive applications.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.