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NTBLS1D5N10MCTXG

Name: onsemi NTBLS1D5N10MCTXG
Brand: onsemi
SKU: 863-NTBLS1D5N10MCTXG
Price: 7.52 USD
Availability: InStock

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Mouser No:

863-NTBLS1D5N10MCTXG

Mfr. No:

NTBLS1D5N10MCTXG

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V STD TOLL

Datasheet:

NTBLS1D5N10MCTXG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTBLS1D5N10MCTXG

In Stock: 2,738

Stock:: 2,738 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.52	$7.52
	$5.68	$56.80
	$4.43	$443.00
	$3.95	$3,950.00
Full Reel (Order in multiples of 2000)
	$3.94	$7,880.00
4,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	312 A
Rds On - Drain-Source Resistance:	1.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	131 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	322 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	90 ns
Forward Transconductance - Min:	230 S
Product Type:	MOSFETs
Rise Time:	71 ns
Series:	NTBLS1D5N10MC
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	83 ns
Typical Turn-On Delay Time:	39 ns

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Datasheet

NTBLS1D5N10MCTXG Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NTBLS1D5N10MC Single N-Channel MOSFET

onsemi NTBLS1D5N10MC Single N-Channel MOSFET has a low R_DS(on), ensuring efficient power management. The onsemi NTBLS1D5N10MC features a low Q_G and capacitance to enhance performance by minimizing charge/discharge times. This MOSFET significantly reduces switching noise and electromagnetic interference (EMI), contributing to a cleaner signal environment.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.