MP1918 100V Half-Bridge GaN MOSFET Drivers

Monolithic Power Systems (MPS) MP1918 100V Half-Bridge GaN MOSFET Drivers are designed for driving enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs. The Monolithic Power Systems (MPS) MP1918 features independent high-side (HS) and low-side (LS) PWM inputs and uses a bootstrap technique for the HS driver voltage. The device operates up to 100V and includes a charging technology that prevents the HS driver voltage from exceeding the VCC, protecting the gate from surpassing the GaN FETs maximum gate-to-source voltage rating.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Type Mounting Style Package/Case Number of Drivers Number of Outputs Output Current Supply Voltage - Min Supply Voltage - Max Rise Time Fall Time Minimum Operating Temperature Maximum Operating Temperature Packaging
Monolithic Power Systems (MPS) Gate Drivers 100V, High-Frequency, Half-Bridge GaN/MOSFET Driver 4,085In Stock
Min.: 1
Mult.: 1
Reel: 5,000

Gate Drivers Half-Bridge SMD/SMT QFN-14 2 Driver 1 Output 5 A 3.7 V 5.5 V 5 ns 3 ns - 40 C + 125 C Reel, Cut Tape
Monolithic Power Systems (MPS) Gate Drivers 100V, High-Frequency, Half-Bridge GaN/MOSFET Driver Non-Stocked
Min.: 500
Mult.: 500
Reel: 500

Gate Drivers Half-Bridge SMD/SMT QFN-14 2 Driver 1 Output 5 A 3.7 V 5.5 V 5 ns 3 ns - 40 C + 125 C Reel