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NVMTSC1D3N08M7TXG

Name: onsemi NVMTSC1D3N08M7TXG
Brand: onsemi
SKU: 863-NVMTSC1D3N08M7TG
Price: 6.12 USD
Availability: InStock

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See Product Specifications

Mouser No:

863-NVMTSC1D3N08M7TG

Mfr. No:

NVMTSC1D3N08M7TXG

Mfr.:

onsemi

Description:

MOSFETs PT7 80V DC PQFN8*8 EXPANSION

Datasheet:

NVMTSC1D3N08M7TXG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMTSC1D3N08M7TXG

In Stock: 6,276

Stock:: 6,276

Can Dispatch Immediately

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On Order:: 9,000

Expected 20/03/2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$6.12	$6.12
	$4.36	$43.60
	$3.18	$318.00
	$3.01	$3,010.00
Full Reel (Order in multiples of 3000)
	$2.97	$8,910.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFNW-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	348 A
Rds On - Drain-Source Resistance:	1.25 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	196 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	5.1 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	KR
Country of Origin:	PH
Fall Time:	32.8 ns
Forward Transconductance - Min:	253 S
Product Type:	MOSFETs
Rise Time:	29 ns
Series:	NVMTSC1D3N08M7
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80.9 ns
Typical Turn-On Delay Time:	39.9 ns
Unit Weight:	319.280 mg

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Datasheet

NVMTSC1D3N08M7TXG Datasheet

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NVMTSC1D3N08M7 Single N-Channel Power MOSFET

onsemi NVMTSC1D3N08M7 Single N-Channel Power MOSFET is a compact and efficiently designed automotive power MOSFET with high thermal performance. This power MOSFET features low capacitance and a Wettable Flank plated option for enhanced optical inspection. onsemi NVMTSC1D3N08M7 MOSFET is AEC-Q101 Qualified and PPAP capable and comes in a small footprint of an 8mm x 8mm flat lead package. This device is ideally used in reverse battery protection, switching power supplies, high-side drivers, low-side drivers, H-bridges, and other automotive applications.