QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Results: 34
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 Mfr.
Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Qorvo GaN FETs DC-3.5GHz 55 Watt 28V GaN Flangeless
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 100
Mult.: 100

NI-360 N-Channel
Qorvo GaN FETs DC-6.0GHz 10 Watt 28V GaN
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 100
Mult.: 100

Qorvo GaN FETs DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
Datasheet
Product Comments
Lead-Time 20 Weeks
Min.: 50
Mult.: 50

Die N-Channel
Qorvo GaN FETs DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
Datasheet
Product Comments

Die N-Channel
Qorvo GaN FETs DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
Datasheet
Product Comments

Die N-Channel
Qorvo GaN FETs DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
Datasheet

Screw Mount NI-360 N-Channel 32 V 7.32 A - 40 C + 85 C 86 W
Qorvo GaN FETs DC-25GHz 7Watt NF 1.3dB GaN
Datasheet
Product Comments
Non-Stocked Lead-Time 24 Weeks
Min.: 5
Mult.: 5

SMD/SMT DIE N-Channel 80 mA - 40 C + 85 C 8.9 W
Qorvo GaN FETs 8-12GHz 20W GaN PAE 50% Gain 11dB
Datasheet

SMD/SMT QFN-20 N-Channel 1 Channel 32 V 1.3 A + 225 C 33 W
Qorvo T1G4020036-FL
Qorvo GaN FETs DC-3.5GHz GaN 2X 120W 36Volt
Datasheet

NI-650 N-Channel