Results: 31
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging

Infineon Technologies MOSFETs N-Ch 650V 24.3A TO247-3 CoolMOS C3 111In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 24.3 A 160 mOhms - 20 V, 20 V 3.9 V 104.9 nC - 55 C + 150 C 240 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 7.3A TO220FP-3 CoolMOS C3 135In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 2.1 V 21 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs N-Ch 650V 20.7A TO247-3 CoolMOS C3 27In Stock
1,200Expected 06/03/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_LEGACY 2In Stock
2,500Expected 11/06/2026
Min.: 1
Mult.: 1
Reel: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 3.2 A 1.4 Ohms - 20 V, 20 V 3.9 V 15 nC - 55 C + 150 C 38 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 560V 21A I2PAK-3 Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-262-3 N-Channel 1 Channel 500 V 21 A 190 mOhms - 20 V, 20 V 3 V 95 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 650V 11A TO220FP-3 CoolMOS C3 Lead-Time 11 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 11 A 380 mOhms - 20 V, 20 V 3.9 V 45 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube