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NCV57001DWR2G

Name: onsemi NCV57001DWR2G
Brand: onsemi
SKU: 863-NCV57001DWR2G
Price: 6.01 USD
Availability: InStock

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Mouser No:

863-NCV57001DWR2G

Mfr. No:

NCV57001DWR2G

Mfr.:

onsemi

Description:

Galvanically Isolated Gate Drivers IGBT gate driver

Datasheet:

NCV57001DWR2G Datasheet

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In Stock: 8,270

Stock:: 8,270 Can Dispatch Immediately

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$6.01	$6.01
	$4.17	$41.70
	$3.82	$95.50
	$3.03	$303.00
	$2.91	$727.50
	$2.75	$1,375.00
Full Reel (Order in multiples of 1000)
	$2.48	$2,480.00
5,000	Quote

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	NCV57001
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	1.4 W
Propagation Delay - Max:	90 ns
Rise Time:	10 ns
Fall Time:	15 ns
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Inverting, Non-Inverting
Maximum Turn-Off Delay Time:	90 ns
Maximum Turn-On Delay Time:	90 ns
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Operating Supply Current:	4.8 mA
Output Current:	4 A
Product:	IGBT, MOSFET Gate Drivers
Product Type:	Galvanically Isolated Gate Drivers
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	5 V
Supply Voltage - Min:	3.3 V

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Datasheet

NCV57001DWR2G Datasheet

CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

Galvanically Isolated High Current Gate Drivers

onsemi Galvanically Isolated High Current Gate Drivers offer high transient and electromagnetic immunity. The NCx5700x is a high-current single-channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high-power applications. The drivers feature complementary inputs, open-drain FAULT, Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn-off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. The NCx5700x accommodates 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. These onsemi devices provide >5kV_RMS (UL1577 rating) galvanic isolation and >1200V_IORM (working voltage) capabilities. The NCx5700x series is available in the wide-body SOIC-16 package with a guaranteed 8mm creepage distance between input and output to fulfill reinforced safety insulation requirements.

NCV57001 Isolated High Current IGBT Gate Drivers

onsemi NCV57001 Isolated High Current IGBT Gate Drivers with internal galvanic isolation are designed for high system efficiency and reliability in high-power applications. The NCV57001's features include complementary inputs, open drain FAULT, Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. The device allows both 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. The device provides >5kV_rms (UL1577 rating) galvanic isolation and >1200V_iorm (working voltage) capabilities. The NCV57001 Isolated High Current IGBT Gate Driver is packaged to fulfill reinforced safety insulation requirements. The device is offered in a wide-body SOIC-16 package with a guaranteed 8mm creepage distance between input and output.