HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging

IXYS MOSFETs 500V 36A Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 19 A 190 mOhms - 30 V, 30 V 2.5 V 93 nC - 55 C + 150 C 156 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 200V 50A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 50 A 30 mOhms - 20 V, 20 V 2.5 V 33 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs 102 Amps 150V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 102 A HiPerFET Tube
IXYS MOSFETs 600V 10A Non-Stocked Lead-Time 27 Weeks
Min.: 800
Mult.: 800
Reel: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 10 A 740 mOhms - 30 V, 30 V 5.5 V 32 nC - 55 C + 150 C 200 W Enhancement HiPerFET Reel
IXYS MOSFETs 650V/12A TO-263 Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs 130 Amps 100V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 130 A 9.1 mOhms HiPerFET Tube
IXYS MOSFETs TO263 850V 14A N-CH HIPER Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 850 V 14 A 550 mOhms - 30 V, 30 V 3.5 V 30 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 16A Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 16 A 400 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 500 V 16 A 360 mOhms HiPerFET Tube
IXYS MOSFETs 600V 16A Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 Non-Stocked
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 230 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/18A TO-263 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 500 V 20 A 300 mOhms HiPerFET Tube
IXYS MOSFETs TO263 600V 22A N-CH POLAR Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si HiPerFET Tube
IXYS MOSFETs TrenchT2 HiperFETs Power MOSFET Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 Non-Stocked
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 24 A 175 mOhms - 30 V, 30 V 2.5 V 47 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 26 A 240 mOhms HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 Non-Stocked
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 30 A 155 mOhms - 30 V, 30 V 2.5 V 56 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 250V 44A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 250 V 44 A 40 mOhms - 20 V, 20 V 2.5 V 33 nC - 55 C + 175 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 600 V 4 A 2.2 Ohms HiPerFET Tube
IXYS MOSFETs TO263 850V 3.5A N-CH XCLASS Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) HiPerFET Tube
IXYS MOSFETs TO263 200V 50A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 50 A 30 mOhms - 20 V, 20 V 2.5 V 33 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 500 V 5 A 1.65 Ohms HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-263D2 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 150V 76A N-CH TRENCH Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 150 V 76 A 22 mOhms - 20 V, 20 V 2.5 V 97 nC - 55 C + 175 C 350 W Enhancement HiPerFET Tube