HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging

IXYS MOSFETs 250V/44A Ultra Junct ion X3-Class MOSFET Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 44 A 18 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 104 W Enhancement HiPerFET Tube
IXYS MOSFETs 102 Amps 300V 0.033 Rds Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 102 A 33 mOhms - 20 V, 20 V 5 V 224 nC - 55 C + 150 C 700 W Enhancement HiPerFET Tube
IXYS MOSFETs 120 Amps 250V 0.024 Rds Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 120 A 24 mOhms - 20 V, 20 V - 55 C + 175 C 700 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 120 A 27 mOhms - 20 V, 20 V 3 V 150 nC - 55 C + 150 C 1.13 mW Enhancement HiPerFET Tube
IXYS MOSFETs 120A 300V Non-Stocked Lead-Time 25 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 120 A 24 mOhms - 20 V, 20 V 5 V 265 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/120A Ultra Junction X2 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25
Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 120 A 24 mOhms - 30 V, 30 V 2.7 V 225 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs TRENCH HIPERFET PWR MOSFET 250V 140A Non-Stocked Lead-Time 25 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 140 A 17 mOhms - 20 V, 20 V 5 V 255 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs 160A 300V Non-Stocked Lead-Time 24 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 160 A 19 mOhms - 20 V, 20 V 5 V 335 nC - 55 C + 150 C 1.39 kW Enhancement HiPerFET Tube
IXYS MOSFETs 170 Amps 200V 0.014 Rds Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 170 A 14 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 170 A 6.1 mOhms - 20 V, 20 V 2.5 V 190 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs 180 Amps 70V 0.006 Rds Non-Stocked Lead-Time 34 Weeks
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 70 V 180 A 6 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HiPerFET Tube
IXYS MOSFETs 180 Amps 150V 0.011 Rds Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 180 A 11 mOhms - 20 V, 20 V 5 V 240 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs 20 Amps 1200V 1 Rds Non-Stocked Lead-Time 49 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 20 A 570 mOhms - 30 V, 30 V 6.5 V 193 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFETs 220Amps 150V Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 220 A 9 mOhms - 20 V, 20 V 4.5 V 162 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 24 Amps 800V 0.4 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 24 A 400 mOhms - 30 V, 30 V 5 V 105 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs 26 Amps 1000V Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 20 A 390 mOhms - 30 V, 30 V - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFETs 27 Amps 800V 0.32 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 27 A 320 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 170 V 320 A 5.2 mOhms - 20 V, 20 V 2.5 V 640 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube
IXYS MOSFETs 32 Amps 800V 0.27 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 32 A 270 mOhms - 30 V, 30 V 5 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/32A Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 32 A 270 mOhms - 30 V, 30 V 140 nC + 150 C 1 kW HiPerFET Tube
IXYS MOSFETs 600V 36A Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 36 A 190 mOhms - 30 V, 30 V 3 V 102 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-264(3) Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 400 A 3 mOhms - 20 V, 20 V 2.5 V 365 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 900 V 40 A 210 mOhms - 30 V, 30 V 6.5 V 230 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/44A Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 44 A 190 mOhms - 30 V, 30 V 6.5 V 185 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 600V 48A Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 48 A 135 mOhms - 30 V, 30 V - 55 C + 150 C 830 W Enhancement HiPerFET Tube