HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/48A Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 48 A 140 mOhms - 30 V, 30 V 140 nC 1 kW HiPerFET Tube
IXYS MOSFETs 52A 1000V POWER MOSFET Non-Stocked Lead-Time 36 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms - 30 V, 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 64 A 95 mOhms - 30 V, 30 V 190 nC 1.25 kW HiPerFET Tube
IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 850 V 66 A 65 mOhms - 30 V, 30 V 3.5 V 230 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/80A Non-Stocked Lead-Time 35 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 80 A 65 mOhms - 30 V, 30 V 3.5 V 200 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 650V/80A Ultra Junction X2-Class Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 2.7 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-264(3) Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 90 A 38 mOhms - 30 V, 30 V 2.5 V 210 nC - 55 C + 150 C 1.1 kW Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 108 A 16 mOhms - 20 V, 20 V 2.5 V 268 nC - 55 C + 150 C 520 W Enhancement HiPerFET Tube
IXYS MOSFETs 30 Amps 1200V 0.35 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 18 A 380 mOhms - 30 V, 30 V - 55 C + 150 C 357 W Enhancement HiPerFET Tube
IXYS MOSFETs 32 Amps 1200V Non-Stocked Lead-Time 32 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 24 A 340 mOhms - 30 V, 30 V - 55 C + 150 C 520 W Enhancement HiPerFET Tube
IXYS MOSFETs 38 Amps 1000V 0.21 Rds Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 29 A 230 mOhms - 30 V, 30 V 3.5 V 350 nC - 55 C + 150 C 520 W Enhancement HiPerFET Tube
IXYS MOSFETs 40 Amps 1100V 0.2800 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1.1 kV 21 A 280 mOhms - 30 V, 30 V - 55 C + 150 C 357 W Enhancement HiPerFET Tube
IXYS MOSFETs 42 Amps 800V 0.15 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 40 A 150 mOhms - 30 V, 30 V 5 V 250 nC - 55 C + 150 C 625 W Enhancement HiPerFET Tube
IXYS MOSFETs 82 Amps 600V 0.78 Ohm Rds Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 82 A 78 mOhms - 30 V, 30 V 5 V 240 nC - 55 C + 150 C 625 W Enhancement HiPerFET Tube
IXYS MOSFETs 102 Amps 0V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 150 V 102 A 18 mOhms HiPerFET Tube
IXYS MOSFETs 130 Amps 100V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 100 V 130 A 9.1 mOhms HiPerFET Tube
IXYS MOSFETs Trench T2 HiperFET Power MOSFET Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 130 A 9.1 mOhms - 20 V, 20 V 4.5 V 130 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 850V 14A N-CH XCLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 14 A 550 mOhms - 30 V, 30 V 3.5 V 30 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnct XClass TO-220AB/FP Non-Stocked
Min.: 300
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 230 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/18A TO-220 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/18A OVERMOLDED TO-220 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 36 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 500V 20A N-CH POLAR Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 20 A 300 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 8 A 300 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 58 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 650V 230A N-CH TRENCH Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnct XClass TO-220AB/FP Non-Stocked
Min.: 300
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 24 A 175 mOhms - 30 V, 30 V 2.5 V 47 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube