AT25EU0011A-SSHN-B

Renesas / Dialog
724-AT25EU0011ASSHNB
AT25EU0011A-SSHN-B

Mfr.:

Description:
NOR Flash 1 Mbit, Ultra Low Energy, Wide Vcc (1.65V to 3.6V), -40C to 85C, SOIC-N 150mil (Tube), Single, Dual, Quad SPI NOR flash

Datasheet:
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In Stock: 9,605

Stock:
9,605 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$0.34 $0.34
$0.316 $3.16
$0.309 $7.73
$0.296 $14.80
$0.289 $28.32
$0.285 $83.79
$0.279 $164.05
$0.273 $294.29
$0.258 $657.38

Alternative Packaging

Mfr. Part No.:
AT25EU0011A-SSHN-T
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
$0.34
Min:
1

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: NOR Flash
RoHS:  
SMD/SMT
SOIC-Narrow-8
AT25EU0011A
1 Mbit
1.65 V
3.6 V
SPI
128 k x 8
8 bit
- 40 C
+ 85 C
Tube
Brand: Renesas / Dialog
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Moisture Sensitive: Yes
Product Type: NOR Flash
Factory Pack Quantity: 98
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

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CNHTS:
8542329090
USHTS:
8542320051
TARIC:
8542326100
ECCN:
EAR99

AT25EU Ultra-Low-Energy SPI NOR Flash

Renesas / Dialog AT25EU Ultra-Low-Energy SPI NOR Flash with Fast Erase aims to offer low power consumption and fast operation in order to achieve low energy usage. The AT25EU Ultra-Low-Energy SPI NOR Flash with Fast Erase supports power-conscious, size-constrained connected devices. These devices offer a variety of power-saving features, including wide VCC (1.65V to 3.6V) operation to extend the battery life as well as the 100nA to 300nA deep power-down mode to conserve energy when the product is not in use. The erase time, in conjunction with the low-power high-speed operation, will reduce the total energy consumed in any system. The AT25EU Ultra-Low-Energy SPI NOR Flash devices are ideal for use in small coin cell applications, boot/code shadow memory, and simple event/data logging applications.

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