SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
SCT012W90G3-4AG
STMicroelectronics
1:
$20.74
640 In Stock
New Product
Mouser Part No
511-SCT012W90G3-4AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
640 In Stock
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-3
N-Channel
1 Channel
900 V
110 A
15.8 mOhms
- 10 V, + 22 V
3.1 V
138 nC
- 55 C
+ 200 C
625 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
360°
SCT025W120G3AG
STMicroelectronics
1:
$18.07
502 In Stock
New Product
Mouser Part No
511-SCT025W120G3AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
502 In Stock
1
$18.07
10
$13.22
100
$11.61
1,200
Quote
1,200
Quote
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-3
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
- 10 V, + 22 V
3 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
SCT015W120G3-4AG
STMicroelectronics
1:
$24.08
600 Expected 26/10/2026
Mouser Part No
511-SCT015W120G3-4AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
600 Expected 26/10/2026
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP-247-4
N-Channel
1 Channel
1.2 kV
129 A
15 mOhms
- 18 V, + 18 V
4.2 V
167 nC
- 55 C
+ 200 C
673 W
Enhancement
AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
SCT040W120G3-4
STMicroelectronics
1:
$11.50
100 On Order
New Product
Mouser Part No
511-SCT040W120G3-4
New Product
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
100 On Order
1
$11.50
10
$6.98
100
$6.43
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
40 A
54 mOhms
- 10 V, + 22 V
3.1 V
56 nC
- 55 C
+ 200 C
312 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
SCT019W120G3-4AG
STMicroelectronics
600:
$12.82
Non-Stocked Lead-Time 17 Weeks
New Product
Mouser Part No
511-SCT019W120G3-4AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
Non-Stocked Lead-Time 17 Weeks
Buy
Min.: 600
Mult.: 600
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
90 A
26 mOhms
- 10 V, + 22 V
4.2 V
120 nC
- 55 C
+ 200 C
486 W
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
SCT025W120G3-4
STMicroelectronics
600:
$11.24
Non-Stocked Lead-Time 17 Weeks
New Product
Mouser Part No
511-SCT025W120G3-4
New Product
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Non-Stocked Lead-Time 17 Weeks
Buy
Min.: 600
Mult.: 600
Details
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
-10 V, 22 V
4.2 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
SCT070W120G3-4
STMicroelectronics
1:
$10.94
Non-Stocked Lead-Time 17 Weeks
New Product
Mouser Part No
511-SCT070W120G3-4
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Non-Stocked Lead-Time 17 Weeks
1
$10.94
10
$6.53
100
$5.93
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-4
N-Channel
1.2 kV
30 A
87 mOhms
- 10 V, + 22 V
3 V
41 nC
- 55 C
+ 200 C
236 W
Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
SCT070W120G3AG
STMicroelectronics
600:
$6.86
Non-Stocked Lead-Time 17 Weeks
New Product
Mouser Part No
511-SCT070W120G3AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
Non-Stocked Lead-Time 17 Weeks
Buy
Min.: 600
Mult.: 600
Details
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
SCTWA40N120G2V
STMicroelectronics
1:
$18.21
Non-Stocked Lead-Time 32 Weeks
NRND
Mouser Part No
511-SCTWA40N120G2V
NRND
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
Non-Stocked Lead-Time 32 Weeks
1
$18.21
10
$14.58
100
$12.61
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-3
N-Channel
1 Channel
1.2 kV
36 A
100 mOhms
- 10 V, + 22 V
2.45 V
61 nC
- 55 C
+ 200 C
278 W
Enhancement