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PJL9580_R2_00201

Name: Panjit PJL9580_R2_00201
Brand: Panjit
SKU: 241-PJL9580_R2_00201
Price: 1.86 USD
Availability: InStock

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Mouser No:

241-PJL9580_R2_00201

Mfr. No:

PJL9580_R2_00201

Mfr.:

Panjit

Description:

MOSFETs 150V N-Channel Enhancement Mode MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

PJL9580_R2_00201 Datasheet (PDF)

ECAD Model:

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Learn more about Panjit PJL9580_R2_00201

In Stock: 2,500

Stock:: 2,500 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.86	$1.86
	$1.18	$11.80
	$0.784	$78.40
	$0.642	$321.00
	$0.582	$582.00
Full Reel (Order in multiples of 2500)
	$0.494	$1,235.00
	$0.468	$2,340.00
	$0.463	$4,630.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	9 A
Rds On - Drain-Source Resistance:	54 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	10.4 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Panjit
Configuration:	Single
Fall Time:	11 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	8.4 ns
Part # Aliases:	PJL9580
Unit Weight:	83 mg

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Datasheet

PJL9580_R2_00201 Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

150V N-Channel Enhancement-Mode MOSFETs

PANJIT 150V N-Channel Enhancement-Mode MOSFETs are designed with high-speed switching and operate from 4A to 125A continuous drain current. These enhancement-mode MOSFETs are non-automotive devices that operate from -55°C to 175°C junction and storage temperature range. The 150V N-channel MOSFETs are 100% avalanche tested and 100% Rg tested. These N-channel MOSFETs are lead-free in compliance with EU RoHS 2.0. The 150V N-channel MOSFETs are ideal for Battery Management Systems (BMS), Brushless Direct Current (BLDC), and Switch Mode Power Supplies (SMPS).