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M2TP80M12W2-2LA

Name: STMicroelectronics M2TP80M12W2-2LA
Brand: STMicroelectronics
SKU: 511-M2TP80M12W2-2LA
Price: 49.25 USD
Availability: InStock

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Mouser No:

511-M2TP80M12W2-2LA

Mfr. No:

M2TP80M12W2-2LA

Mfr.:

STMicroelectronics

Description:

MOSFET Modules Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC

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New Product:

New from this manufacturer.

Datasheet:

M2TP80M12W2-2LA Datasheet (PDF)

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In Stock: 127

Stock:: 127 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$49.25	$49.25
	$36.83	$405.13
	$35.00	$3,850.00
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFET Modules
RoHS:
Mounting Style:	Press Fit
Number of Channels:	6 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	114 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Height:	5.7 mm
Length:	44 mm
Product:	Power Modules
Product Type:	MOSFET Modules
Qualification:	AQG 324
Factory Pack Quantity:	11
Subcategory:	Discrete and Power Modules
Vf - Forward Voltage:	1.1 V
Width:	27.4 mm
Unit Weight:	13 g

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Datasheet

M2TP80M12W2-2LA Datasheet (PDF)

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Product Change Notification 2025-9-17 (PDF)

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CNHTS:: 8504409100
USHTS:: 8541290055
ECCN:: EAR99

M2TP80M12W2-2LA Automotive Power Module

STMicroelectronics M2TP80M12W2-2LA Automotive Power Module offers a three-phase four-wire PFC topology with integrated NTC, tailored for the PFC stage of the OBC in hybrid and electric vehicles. The power module integrates six second-generation silicon carbide Power MOSFETs. The well-recognized chip technology allows the STMicroelectronics M2TP80M12W2-2LA to minimize energy losses and operate in a high switching frequency mode. The module lets users create complex topologies with very high power densities and high efficiency requirements.