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SQS850EN-T1_GE3

Vishay Semiconductors

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See Product Specifications

Mouser No:

78-SQS850EN-T1_GE3

Mfr. No:

SQS850EN-T1_GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-Channel 60V AEC-Q101 Qualified

Datasheet:

SQS850EN-T1_GE3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SQS850EN-T1_GE3

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	41 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	33 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	TrenchFET
Packaging:	Bulk
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	9.3 ns
Forward Transconductance - Min:	33 S
Product Type:	MOSFETs
Rise Time:	9.6 ns
Series:	SQS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	1 g

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Datasheet

SQS850EN-T1_GE3 Datasheet

Application Notes

PowerPAK 1212-8, The Proven Automotive Package

Models

Technical Resources

REACH Certificate (PDF)

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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In Stock: 10,363

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	$1.75	$1.75
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