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RBx8 Schottky Barrier Diodes
ROHM Semiconductor RBx8 Schottky Barrier Diodes with silicon epitaxial planar structure offer up to 1A average rectified forward current. These diodes feature high reliability, low IR, and up to 5A peak forward surge current. The RBx8 Schottky barrier diodes can be stored in a -55°C to 150°C temperature range. These diodes are ideal for general rectification applications.