CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 4,511In Stock
Cut Tape
$3.90
$2.56
$1.79
$1.47
$1.41
Reel
$1.19
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4,815In Stock
Cut Tape
$2.87
$1.86
$1.28
$1.03
Reel
$0.804
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4,699In Stock
Cut Tape
$2.50
$1.61
$1.10
$0.876
Reel
$0.681
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,611In Stock
1,800Expected 28/01/2027
Cut Tape
$11.01
$6.30
$5.98
$5.64
$4.88
Reel
$4.84
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 907In Stock
Cut Tape
$8.57
$4.66
$4.28
$4.21
$3.67
Reel
$3.43
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,248In Stock
Cut Tape
$4.72
$3.12
$2.21
$1.90
Reel
$1.54
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 602In Stock
Cut Tape
$13.33
$8.94
$8.28
$7.18
Reel
$6.02
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 467In Stock
Cut Tape
$11.03
$6.14
$5.86
$4.79
Reel
$4.78
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 2,068In Stock
Cut Tape
$8.83
$4.81
$4.31
Reel
$3.81
$3.57
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
Cut Tape
$7.37
$3.95
$3.62
$2.91
Reel
$2.81
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
8,960On Order
Cut Tape
$12.72
$7.21
$7.10
$7.03
$5.80
Reel
$5.79
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
3,596Expected 19/11/2026
Cut Tape
$7.19
$4.26
$3.67
$3.37
$2.89
Reel
$2.89
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN