SRAM for Data Acquisition

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SRAM for Data Acquisition

SRAM stands for static random-access memory, a kind of memory chip that uses flip-flop type latching circuitry to store by the bit. SRAM can use very little power when sitting idle for long periods, and thus is better suited for certain applications over other types of memory. Learn More

Results: 487
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Memory Size Organisation Access Time Maximum Clock Frequency Interface Type Supply Voltage - Max Supply Voltage - Min Supply Current - Max Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package/Case Packaging
ISSI SRAM 4Mb 256Kx18 7.5ns Sync SRAM 3.3v Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

4 Mbit 128 k x 18 7.5 ns 117 MHz Parallel 3.465 V 3.135 V 160 mA - 40 C + 85 C SMD/SMT TQFP-100 Tube
ISSI SRAM 2Mb 64Kx36 133Mhz Sync SRAM 3.3v Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

2 Mbit 64 k x 32 4 ns 133 MHz Parallel 3.465 V 3.135 V 190 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
ISSI SRAM 4Mb 256Kx18 7.5ns Sync SRAM 3.3v Lead-Time 26 Weeks
Min.: 1
Mult.: 1

4 Mbit 128 k x 36 7.5 ns 117 MHz Parallel 3.35 V 3.25 V 160 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
ISSI SRAM 4Mb,"No-Wait"/Pipeline,Sync,128K x 36,200Mhz,3.3v I/O,100 Pin TQFP, RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

4 Mbit 3.1 ns 200 MHz 3.465 V 3.135 V 210 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
ISSI SRAM 2Mb 64Kx32 200Mhz Sync SRAM 3.3v Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

2 Mbit 64 k x 32 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 210 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray

ISSI SRAM 4Mb 256Kx16 25ns 2.4-3.6V Async SRAM Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

4 Mbit 256 k x 16 25 ns Parallel 3.6 V 2.4 V 25 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray

ISSI SRAM 2Mb, Low Power/Power Saver,Async,128K x 16,55ns,1.65v-2.2v,44 Pin TSOP II, RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

2 Mbit 128 k x 16 55 ns Parallel 2.2 V 1.65 V 18 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
ISSI SRAM 2Mb 64Kx36 8.5ns Sync SRAM 3.3v Lead-Time 26 Weeks
Min.: 1
Mult.: 1

2 Mbit 64 k x 36 8.5 ns 90 MHz Parallel 3.6 V 3.135 V 150 mA - 40 C + 85 C SMD/SMT TQFP-100 Tube
ISSI SRAM 4Mb,"No-Wait"/Pipeline,Sync,256K x 18,200Mhz,3.3v I/O,100 Pin TQFP, RoHS Lead-Time 26 Weeks
Min.: 1
Mult.: 1

4 Mbit 256 k x 18 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 210 mA - 40 C + 85 C SMD/SMT TQFP-100 Tube

ISSI SRAM 4Mb, Low Power/Power Saver,Async,512K x 8,55ns,2.5v-3.6v,32 Pin TSOP II, RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1
: 1,000

4 Mbit 512 k x 8 55 ns Parallel 3.6 V 2.5 V 15 mA - 40 C + 85 C SMD/SMT TSOP-32 Reel, Cut Tape, MouseReel
ISSI IS62WV6416FBLL-45TLI
ISSI SRAM 1Mb, Low Power/Power Saver,Async,64K x 16,45ns,2.2v-3.6v,44 Pin TSOP II, RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

1 Mbit 128 k x 16 45 ns Parallel 3.6 V 2.2 V 26 mA - 40 C + 85 C SMD/SMT mBGA-48 Tray
ISSI IS66WVO16M8DALL-200BLI
ISSI SRAM 128Mb, OctalRAM, 16Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS Lead-Time 18 Weeks
Min.: 1
Mult.: 1

128 Mbit 16 M x 8 5 ns 200 MHz Serial 1.95 V 1.7 V 45 mA - 40 C + 85 C SMD/SMT TFBGA-24