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AS4C64M32MD1-5BIN

Alliance Memory

Images are for reference only
See Product Specifications

Mouser No:

913-AS4C64M32MD15BIN

Mfr. No:

AS4C64M32MD1-5BIN

Mfr.:

Alliance Memory

Description:

DRAM LPDDR1, 2G, 64M x 32, 1.8v, 200 MHz 90-BALL FBGA, Industrial Temp - Tray

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

AS4C64M32MD1-5BIN Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Alliance Memory
Product Category:	DRAM
RoHS:
Type:	SDRAM Mobile - LPDDR
Memory Size:	2 Gbit
Data Bus Width:	32 bit
Maximum Clock Frequency:	200 MHz
Package/Case:	FBGA-90
Organisation:	64 M x 32
Access Time:	5 ns
Supply Voltage - Min:	1.7 V
Supply Voltage - Max:	1.95 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	AS4C64M32MD1
Packaging:	Tray
Brand:	Alliance Memory
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	348
Subcategory:	Memory & Data Storage
Supply Current - Max:	190 mA

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Attributes selected: 0

Filter Document:

Datasheet

AS4C64M32MD1-5BIN Datasheet (PDF)

EOL

Product Discontinuation Notification 2026-7-24 (PDF)

REACH Declaration (PDF)

Compliance Codes

CNHTS:: 8542319090
USHTS:: 8542320036
JPHTS:: 854232021
KRHTS:: 8542321010
MXHTS:: 8542320201
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Taiwan
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

ALLIANCE MEMORY

AS4C512M16D4D/1G8D4D 8Gb DDR4 SDRAMs

High-speed dynamic random-access memory is internally organized with eight banks or sixteen banks.

AS4C256M16D4 & AS4C512M8D4 4GB DDR4 SDRAMs

Offers low power consumption and fast data transfer rates in 96-ball and 78-ball FBGA packages.

MT41x DDR3 SDRAMs

Feature double data rate 8n-prefetch architecture to achieve high-speed operation.

Fabricated using high-performance, and high-reliability CMOS technology.

Low-Power DDR2 SDRAM

High-speed CMOS and dynamic-access memory that are internally configured as a 8-bank memory device.

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$35.32	$35.32
	$32.71	$327.10
	$31.67	$791.75
	$30.90	$1,545.00
	$29.79	$2,979.00
	$20.02	$5,005.00