STMicroelectronics TN4035HA-8GY Automotive Grade SCR Thyristor
STMicroelectronics TN4035HA-8GY Automotive Grade SCR Thyristor is a high-performance switching device designed for automotive power and protection applications. The thyristor features an 800V off-state voltage rating and a 40A RMS on-state current capability. The device is AEC-Q101 qualified and operates at junction temperatures up to +150°C. The TN4035HA-8GY provides high EFT noise immunity of 1000V/µs and requires a maximum gate trigger current of only 35mA. A rugged design supports critical in-rush current conditions and high surge-current handling. The SCR is housed in a compact D²PAK package that is well suited for advanced surface-mount designs.
This STMicroelectronics automotive-grade thyristor is ideal for battery management systems, capacitor discharge circuits, and onboard chargers. The device also supports overvoltage crowbar protection, power supplies, AC switches, and Solid-State Relays (SSRs). High reliability and robust performance make the TN4035HA-8GY suitable for demanding automotive and industrial power applications.
Features
- AEC-Q101 qualified
- High +150°C junction temperature
- ±800VDC off state voltage
- 40ARMS nominal on-state current
- 1000V/µs high EFT noise immunity
- 35mA maximum IGT
- D2PAK package
- ECOPACK2 compliant
Applications
- Battery management systems
- Capacitor discharge
- Onboard chargers
- Overvoltage crowbar protection
- Power supplies
- AC switches
- SSRs
Specifications
- 40A maximum RMS on-state current (180° conduction angle) at +120°C
- 25A maximum Average on-state current (180° conduction angle) at +120°C
- 600A to 658A maximum non-repetitive surge peak on-state current
- 1800A2s maximum I2t fusing value
- 400A/µs maximum critical rate of rise of on-state current
- 800V maximum repetitive peak on-/off-state voltage
- 900V maximum non-repetitive surge peak off-state voltage
- 10V maximum peak forward gate voltage
- 8A maximum peak forward gate current
- 5V maximum peak reverse gate voltage
- 1W maximum average gate power dissipation
- 0.80V maximum on-state threshold voltage
- 8.3mΩ maximum on-state dynamic resistance
- Thermal resistance
- 0.5°C/W maximum junction-to-case (DC)
- 45°C/W typical junction-to-ambient
- -40°C to +150°C operating junction temperature range
Circuit Diagram
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