Infineon Technologies OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom, and client applications in the computing industry. They can also be used in synchronous rectification in switched-mode power supplies (SMPS) and motor control, solar microinverters, and fast switching DC/DC converter applications.

25V and 30V Power MOSFETs

Infineon OptiMOS 5 25V and 30V Power MOSFETs offer benchmark solutions, enabling the highest power density and energy efficiency in both standby and full operation. These MOSFETs are based on silicon technology and are optimized to meet and exceed energy-efficiency and power density requirements.

These are based on the tightened next-generation voltage regulation standards in DC/DC applications. OptiMOS 5 products address a broad range of voltage regulation applications in the computing industry. This includes server, datacom, and client applications, with a focus on Intel's VR and IMVP platforms.

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Features

  • Superior on-state resistance
  • Benchmark switching performance (lowest Figure of Merits Ron x Qand Ron x Qgd)
  • RoHS-compliant and halogen-free
  • Optimized EMI behavior (integrated damping network)
  • Highest efficiency
  • Highest power density with S3O8 or Power Block package
  • Reduction of overall system costs
  • Operation at high switching frequency

Applications

  • Desktops and servers
  • Single-phase and multiphase PoL
  • CPU/GPU voltage regulation in notebooks
  • High-power-density voltage regulators
  • O-rings
  • E-fuses

System Efficiency

Infineon Technologies OptiMOS™ 5 Power MOSFETs

40V and 60V Power MOSFETs

Infineon OptiMOS 5 40V and 60V Power MOSFETs enable AC-DC designers to meet the challenge of improving system efficiency and power density while reducing system costs. Infineon’s OptiMOS 5 power MOSFETs in the 40V and 60V range feature 15 percent lower RDS(on) and 31 percent lower figure of merit (RDS(on) x Qg) compared to alternative devices, and are the perfect answer to these challenges.

These devices include a wide variety of packages such as DPAK, D²PAK, D²PAK 7-pin, PQFN 2x2, PQFN 3.3x3.3, SuperSO8 5x6, TO-220, TO-220 FullPAK, TOLL, TOLG, and TOLT to meet design and space requirements.

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Features

  • Highest system efficiency
  • Low switching and conduction losses
  • Very low-voltage overshoot
  • Available with a Tjmax of 150°C and 175°C
  • Less paralleling required
  • Increased power density

Applications

  • Photovoltaic
  • Motor control

RDS(on) Comparisons

Infineon Technologies OptiMOS™ 5 Power MOSFETs

80V and 100V Power MOSFETs

Infineon OptiMOS 5 80V and 100V Power MOSFETs are industrial-grade devices designed for synchronous rectification in telecom and server power supply applications. These devices are also ideal for other applications such as solar, low-voltage drives, and laptop adapters.

With a broad package portfolio, the OptiMOS™ 5 family of power MOSFETs offers the industry’s lowest RDS(on), as low as 2.7mΩ in the SuperSO8 package, providing the highest levels of power density and efficiency.

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Features

  • Synchronous rectification optimized
  • High switching frequency
  • Low output capacitance
  • Low RDS(on)

Applications

  • Server power supply units (PSU)
  • Light electric vehicle solutions
  • AC-DC power conversion for telecommunications infrastructure
  • Power adapters and chargers
  • Photovoltaic
  • Motor control

Performance Comparisons

Infineon Technologies OptiMOS™ 5 Power MOSFETs

150V Power MOSFETs

Infineon OptiMOS™ 5 150V Power MOSFETs are suitable for low-voltage drives, such as forklifts, e-scooters, telecom, and solar applications. The 150V MOSFETs offer an up to 25 percent reduction in RDS(on) and Qrr without compromising FOMgd. This reduces design effort and optimizes system efficiency. The ultralow reverse recovery charge (lowest Qrr in SuperSO8 = 26nC) increases commutation ruggedness.

​The OptiMOS 5 150V technology enables smaller best-in-class SuperSO8 (PQFN 5x6) package devices to replace TO-220 alternatives. The switch provides increased power density and lower voltage overshoot (VDS) due to reduced package inductance.

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Features

  • Lower RDS(on) without compromising FOMgd and FOMOSS
  • Lower output charge
  • Ultralow reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible

Applications

  • Low voltages drives
  • Telecom
  • Solar

Performance Comparisons

Infineon Technologies OptiMOS™ 5 Power MOSFETs

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Published: 2015-05-19 | Updated: 2026-04-14