Bourns BSD Silicon Carbide Schottky Barrier Diodes

Bourns BSD Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are designed for high-frequency and high-current applications that require increased peak forward surge capability, low forward voltage drop, reduced thermal resistance, and low power loss. These advanced wide band gap components help increase reliability, switching performance, and efficiency in DC-DC and AC-DC converters, switched-mode power supplies, photovoltaic inverters, motor drives, and other rectification applications. Bourns BSD SiC SBDs offer 650V to 1200V voltage operation with currents in the 5A to 10A range. These highly efficient devices also feature no reverse recovery current to reduce EMI, enabling the SiC SBDs to significantly lower energy losses.